DMS2120LFWB-7
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Краткое описание:
Power Field-Effect Transistor, 2.9A I(D), 20V, 0.095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-8
Дополнительная информация
Power Field-Effect Transistor, 2.9A I(D), 20V, 0.095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-8
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2mm |
| Height | 0.78mm |
| Length | 3mm |
| Weight | 0.001319oz |
| Polarity | P-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 95mR |
| Package/Case | DFN |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 632pF |
| Number of Channels | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 95mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 2.9A |
| Drain to Source Voltage (Vdss) | 20V |
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