DMS3015SSS-13
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Краткое описание:
N-Channel MOSFET, 30V, 11A, 11.9mΩ Rds On, SOP-8
Дополнительная информация
N-Channel Power MOSFET featuring 30V Drain-to-Source Voltage (Vdss) and 11A Continuous Drain Current (ID). Offers low 8.5mR Drain to Source Resistance and 11.9mR Rds On Max. This silicon Metal-oxide Semiconductor FET operates with a 1.5V Threshold Voltage and 20V Gate to Source Voltage. Packaged in a surface-mount SOP-8 plastic housing, it boasts fast switching speeds with a 15.8ns Turn-On Delay Time and 13.6ns Fall Time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.95mm |
| Height | 1.5mm |
| Length | 4.95mm |
| Weight | 0.00261oz |
| FET Type | 1 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 13.6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 11.9mR |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.276nF |
| Threshold Voltage | 1.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 15.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 29.7ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.55W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 30V |
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