DN2530N8-G

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DN2530N8-G - Microchip
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Краткое описание: 300V 200mA N-CH JFET SOT-89 Surface Mount
Производитель Microchip
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel small signal JFET in a SOT-89 package, featuring a 300V drain-source breakdown voltage and 200mA continuous drain current. This surface-mount device offers a low 12 Ohm drain-source resistance (Rds On Max) and a 10ns turn-on delay. Operating across a -55°C to 150°C temperature range, it supports a maximum power dissipation of 1.6W.
RoHS Compliant
Mount Surface Mount
Width 2.6mm
Height 1.6mm
Length 4.6mm
Weight 0.001862oz
Polarity N-CHANNEL
Fall Time 15ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 12R
Package/Case SOT-89
RoHS Compliant Yes
Package Quantity 2000
Input Capacitance 300pF
Power Dissipation 1.6W
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 10ns
Radiation Hardening No
Turn-Off Delay Time 15ns
Reach SVHC Compliant Unknown
Max Power Dissipation 1.6W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 12R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 200mA
Drain to Source Voltage (Vdss) 300V
Drain to Source Breakdown Voltage 300V

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