DN2535N3-G

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DN2535N3-G - Microchip
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Краткое описание: 350V, 120mA N-CH JFET, TO-92, 25R
Производитель Microchip
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel JFET with 350V drain-source breakdown voltage and 120mA continuous drain current. Features 25 Ohm drain-source resistance (Rds On Max) and 1W power dissipation. Operates across a temperature range of -55°C to 150°C. Packaged in TO-92 for through-hole mounting, with fast switching speeds including 10ns turn-on delay and 15ns turn-off delay.
RoHS Compliant
Mount Through Hole
Width 4.19mm
Height 5.33mm
Length 5.21mm
Weight 0.016oz
Polarity N-CHANNEL
Fall Time 20ns
Lead Free Lead Free
Packaging Bulk
Rds On Max 25R
Package/Case TO-92
RoHS Compliant Yes
Package Quantity 1000
Input Capacitance 300pF
Power Dissipation 1W
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 10ns
Radiation Hardening No
Turn-Off Delay Time 15ns
Reach SVHC Compliant Unknown
Max Power Dissipation 1W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 25R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 120mA
Drain to Source Voltage (Vdss) 350V
Drain to Source Breakdown Voltage 350V

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