DN2535N5-G

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DN2535N5-G - Microchip
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Краткое описание: 350V N-Channel Power MOSFET, 0.5A, 25R, TO-220
Производитель Microchip
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET featuring 350V drain-to-source breakdown voltage and 500mA continuous drain current. This through-hole component offers 25 ohms drain-to-source resistance (Rds On Max) and 15W power dissipation. Operating across a temperature range of -55°C to 150°C, it exhibits fast switching characteristics with turn-on delay of 10ns and fall time of 20ns. Housed in a TO-220 package, this lead-free MOSFET is suitable for various power switching applications.
RoHS Compliant
Mount Through Hole
Width 4.83mm
Height 9.02mm
Length 10.67mm
Weight 0.211644oz
Polarity N-CHANNEL
Fall Time 20ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 25R
Package/Case TO-220
Package Quantity 50
Input Capacitance 300pF
Power Dissipation 15W
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 10ns
Turn-Off Delay Time 15ns
Reach SVHC Compliant Unknown
Max Power Dissipation 15W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 25R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 500mA
Drain to Source Voltage (Vdss) 350V
Drain to Source Breakdown Voltage 350V

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