DN3135N8-G

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DN3135N8-G - Microchip
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Краткое описание: N-CH JFET, 350V, 135mA, 35R, SOT-89, SM
Производитель Microchip
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel JFET with 350V drain-source breakdown voltage and 135mA continuous drain current. Features 35 Ohm drain-source resistance (Rds On Max) and 1.3W power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in a SOT-89 surface-mount case, this component offers fast switching with a 10ns turn-on delay and 15ns fall time.
RoHS Compliant
Mount Surface Mount
Width 2.6mm
Height 1.6mm
Length 4.6mm
Weight 0.001862oz
Polarity N-CHANNEL
Fall Time 15ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 35R
Package/Case SOT-89
RoHS Compliant Yes
Package Quantity 2000
Input Capacitance 120pF
Power Dissipation 1.3W
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 10ns
Turn-Off Delay Time 15ns
Reach SVHC Compliant Unknown
Max Power Dissipation 1.3W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 35R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 135mA
Drain to Source Voltage (Vdss) 350V
Drain to Source Breakdown Voltage 350V

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