DN3545N8-G

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DN3545N8-G - Microchip
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Краткое описание: 450V 0.2A 20R N-CH MOSFET, SOT-89, Power, SM
Производитель Microchip
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET, SOT-89 package, offering 450V drain-to-source breakdown voltage and 200mA continuous drain current. Features 20 Ohm drain-to-source resistance (Rds On Max), 30ns fall time, and 20ns turn-on delay. Operates with a 20V gate-to-source voltage and has a maximum power dissipation of 1.6W. This surface mount component is RoHS compliant and operates within a temperature range of -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 2.6mm
Height 1.6mm
Length 4.6mm
Weight 0.001862oz
Polarity N-CHANNEL
Fall Time 30ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 20R
Package/Case SOT-89
RoHS Compliant Yes
Package Quantity 2000
Input Capacitance 360pF
Power Dissipation 1.6W
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 20ns
Radiation Hardening No
Turn-Off Delay Time 30ns
Reach SVHC Compliant Unknown
Max Power Dissipation 1.6W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 20R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 200mA
Drain to Source Voltage (Vdss) 450V
Drain to Source Breakdown Voltage 450V

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