DN3765K4-G
Производится
Увеличить
Краткое описание:
650V 0.3A 8R N-CH Si Power MOSFET TO-252
Дополнительная информация
N-channel power MOSFET featuring 650V drain-source breakdown voltage and 300mA continuous drain current. This surface-mount component offers 8Ω drain-source resistance and a maximum power dissipation of 2.5W. Designed for demanding applications, it operates within a temperature range of -55°C to 150°C and is packaged in a TO-252 case. Key switching characteristics include a 50ns turn-on delay and 75ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.1mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Weight | 0.139332oz |
| Polarity | N-CHANNEL |
| Fall Time | 100ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8R |
| Package/Case | TO-252 |
| Package Quantity | 2000 |
| Input Capacitance | 825pF |
| Power Dissipation | 2.5W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 50ns |
| Turn-Off Delay Time | 75ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 300mA |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 650V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
