DNLS350E-13
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NPN BJT Transistor, 3A, 50V, 100MHz, SOT-223
Дополнительная информация
NPN bipolar junction transistor (BJT) for small signal applications. Features a 3A continuous collector current and 50V collector-emitter breakdown voltage. Operates within a -55°C to 150°C temperature range with a 1W maximum power dissipation. Surface mountable in a SOT-223 plastic package, offering a 100MHz transition frequency. RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.5mm |
| Height | 1.6mm |
| Length | 6.5mm |
| Weight | 0.000282oz |
| Polarity | NPN |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 3A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 3A |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 290mV |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 290mV |
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