DP0150BLP4-7
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Краткое описание:
PNP Transistor, 50V, 100mA, 450mW, DFN, Surface Mount
Дополнительная информация
The DP0150BLP4-7 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features a maximum power dissipation of 450mW and is packaged in a surface mount DFN package. The transistor operates over a temperature range of -55°C to 150°C and is compliant with RoHS and Reach SVHC regulations.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.6mm |
| Height | 0.35mm |
| Length | 1mm |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | DFN |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 80MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 450mW |
| Gain Bandwidth Product | 80MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Breakdown Voltage | 50V |
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