DP350T05-7

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DP350T05-7 - Diodes
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Краткое описание: PNP BJT Transistor, 350V VCEO, 500mA IC, 50MHz, SOT-23
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 350V Collector Emitter Breakdown Voltage (VCEO) and 350V Collector Base Voltage (VCBO). Offers a maximum collector current of 500mA and a transition frequency of 50MHz. Packaged in a SOT-23 plastic surface-mount case, this RoHS compliant component operates from -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1mm
Length 3.05mm
Weight 0.000282oz
hFE Min 20
Polarity PNP
Frequency 50MHz
Lead Free Lead Free
Packaging Tape and Reel
Termination SMD/SMT
Package/Case SOT-23
Current Rating -500mA
RoHS Compliant Yes
DC Rated Voltage -350V
Package Quantity 3000
Power Dissipation 300mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 50MHz
Max Breakdown Voltage 350V
Max Collector Current 500mA
Max Power Dissipation 300mW
Gain Bandwidth Product 50MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) 350V
Collector-emitter Voltage-Max 1V
Collector Emitter Voltage (VCEO) 350V
Collector Emitter Breakdown Voltage 350V
Collector Emitter Saturation Voltage -1V

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