DPBT8105-7
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PNP BJT Transistor, 1A, 60V, 150MHz, SOT-23, Surface Mount
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage and a maximum collector current of 1A. Operates with a transition frequency of 150MHz and a maximum power dissipation of 300mW. Packaged in a SOT-23 surface mount plastic package, this component is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3mm |
| Weight | 0.000282oz |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Current Rating | -1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 1A |
| Max Power Dissipation | 300mW |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Collector Base Voltage (VCBO) | -80V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -600mV |
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