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NPN BJT Transistor, 20V, 500mA, 150MHz, TO-236
Дополнительная информация
NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a 20V collector-emitter breakdown voltage and 500mA continuous collector current. Operates with a gain bandwidth product of 150MHz and a maximum power dissipation of 200mW. Packaged in a TO-236-3 (SC-59A) surface-mount case, this silicon transistor is HALOGEN FREE and ROHS COMPLIANT.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.5mm |
| Height | 1.1mm |
| Length | 2.9mm |
| hFE Min | 200 |
| Polarity | NPN |
| Packaging | Tape and Reel |
| Package/Case | TO-236-3 |
| Max Frequency | 150MHz |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 12V |
| Continuous Collector Current | 500mA |
| Collector Base Voltage (VCBO) | 25V |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 400mV |
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