DSS20200L-7
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Краткое описание:
PNP BJT Transistor, 2A I(C), 20V V(CEO), 100MHz, SOT-23
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 2A maximum collector current and 20V collector-emitter breakdown voltage (VCEO). Offers a minimum DC current gain (hFE) of 250 and a transition frequency of 100MHz. Packaged in a compact SOT-23 surface-mount plastic package, this RoHS compliant component operates within a temperature range of -55°C to +150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 1mm |
| Length | 2.9mm |
| Weight | 0.000282oz |
| hFE Min | 250 |
| Polarity | PNP |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-23 |
| Max Frequency | 100MHz |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 1.2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 2A |
| Max Power Dissipation | 600mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -7V |
| Collector Base Voltage (VCBO) | 20V |
| Collector-emitter Voltage-Max | 180mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | -180mV |
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