DSS20201L-7
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Краткое описание:
NPN BJT Transistor, 2A I(C), 20V V(BR)CEO, 150MHz, SOT-23
Дополнительная информация
NPN bipolar junction transistor (BJT) for small signal applications. Features a 2A maximum collector current and 20V collector-emitter breakdown voltage. Operates with a 150MHz gain bandwidth product and a 100mV collector-emitter saturation voltage. Packaged in a 3-pin SOT-23 surface mount plastic package, this silicon transistor is RoHS compliant and operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 1mm |
| Length | 2.9mm |
| Weight | 0.000282oz |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 2A |
| Max Power Dissipation | 600mW |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 20V |
| Collector-emitter Voltage-Max | 100mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 100mV |
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