DSS4140U-7
Производится
Увеличить
Краткое описание:
NPN BJT Transistor, 40V VCEO, 1A IC, 150MHz fT, SOT-323
Дополнительная информация
NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 40V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 1A. Offers a minimum DC current gain (hFE) of 300 and a transition frequency of 150MHz. Housed in an ultra-small, plastic SOT-323 surface mount package, this RoHS compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 1mm |
| Length | 2.15mm |
| Weight | 0.000212oz |
| hFE Min | 300 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-323 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 1A |
| Max Power Dissipation | 400mW |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 500mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
