DSS4160U-7

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DSS4160U-7 - Diodes
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Краткое описание: NPN BJT Transistor, 60V VCEO, 1A IC, 150MHz, SOT-323
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction transistor for small signal applications. Features a 60V collector-emitter breakdown voltage and 1A maximum collector current. Offers a minimum DC current gain (hFE) of 250 and a transition frequency of 150MHz. Packaged in an ultra-small, 3-pin plastic SOT-323 surface-mount package. Operates across a wide temperature range from -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 1.3mm
Height 1mm
Length 2.15mm
Weight 0.000212oz
hFE Min 250
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Termination SMD/SMT
Package/Case SOT-323
RoHS Compliant Yes
Package Quantity 3000
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 150MHz
Max Breakdown Voltage 60V
Max Collector Current 1A
Max Power Dissipation 400mW
Gain Bandwidth Product 150MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 80V
Collector-emitter Voltage-Max 280mV
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 280mV

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