DSS4220V-7
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NPN BJT Transistor | 2A I(C) | 20V V(BR)CEO | 260MHz f(T) | SOT-563
Дополнительная информация
NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a 2A maximum collector current and 20V collector-emitter breakdown voltage. Operates with a 260MHz gain bandwidth product and 220 minimum hFE. Housed in an ultra-small, 6-lead SOT-563 plastic package for surface mounting. Rated for operation from -55°C to 150°C with 600mW power dissipation. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.2mm |
| Height | 0.6mm |
| Length | 1.6mm |
| Weight | 0.000106oz |
| hFE Min | 220 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-563 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 600mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 260MHz |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 2A |
| Max Power Dissipation | 600mW |
| Gain Bandwidth Product | 260MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 20V |
| Collector-emitter Voltage-Max | 350mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
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