DSS4540X-13
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Краткое описание:
NPN BJT Transistor | 4A I(C) | 40V V(BR)CEO | SOT-89 | 70MHz
Дополнительная информация
NPN bipolar junction transistor featuring a 4A maximum collector current and 40V collector-emitter breakdown voltage. This silicon transistor offers a minimum DC current gain (hFE) of 300 and a transition frequency of 70MHz. Packaged in a SOT-89 surface-mount plastic package, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.6mm |
| Height | 1.6mm |
| Length | 4.6mm |
| Weight | 0.001834oz |
| hFE Min | 300 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-89 |
| Max Frequency | 70MHz |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 70MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 4A |
| Max Power Dissipation | 2W |
| Gain Bandwidth Product | 70MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 355mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 355mV |
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