DSS5160T-7

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DSS5160T-7 - Diodes
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Краткое описание: PNP BJT Transistor, 60V, 1A, 150MHz, SOT-23
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage and 1A maximum collector current. Operates with a -340mV collector-emitter saturation voltage and a 150MHz gain bandwidth product. Packaged in a 3-lead SOT-23 surface mount plastic package, this component is RoHS and REACH SVHC compliant, designed for operation between -55°C and 150°C.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1.1mm
Length 3mm
Weight 0.000282oz
Polarity PNP
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23
RoHS Compliant Yes
Package Quantity 3000
Reach SVHC Compliant Yes
Transition Frequency 150MHz
Max Breakdown Voltage 60V
Max Collector Current 1A
Max Power Dissipation 725mW
Gain Bandwidth Product 150MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -80V
Collector-emitter Voltage-Max 340mV
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage -340mV

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