DSS5220V-7
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PNP BJT Transistor, 20V VCEO, 2A IC, 150MHz, SOT-563
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 20V collector-emitter breakdown voltage (VCEO) and a continuous collector current (IC) of -2A. Offers a minimum DC current gain (hFE) of 220 and a transition frequency of 150MHz. Packaged in an ultra-small, 6-lead plastic SOT-563 surface-mount package. Operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.2mm |
| Height | 0.6mm |
| Length | 1.6mm |
| Weight | 0.000106oz |
| hFE Min | 220 |
| Polarity | PNP |
| Frequency | 150MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-563 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 600mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 2A |
| Max Power Dissipation | 600mW |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -2A |
| Collector Base Voltage (VCBO) | 20V |
| Collector-emitter Voltage-Max | 390mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | -80mV |
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