DST857BDJ-7
Производится
Увеличить
Краткое описание:
PNP BJT Transistor, 45V VCEO, 100mA IC, 340MHz fT, SOT-963
Дополнительная информация
PNP Silicon Bipolar Junction Transistor, surface mount, featuring a 45V Collector-Emitter Breakdown Voltage and 100mA Continuous Collector Current. This 2-element transistor operates within a -55°C to 150°C temperature range, with a 300mW power dissipation. It boasts a 340MHz Gain Bandwidth Product and is supplied in a SOT-963 plastic package on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | PNP |
| Packaging | Tape and Reel |
| Package/Case | SOT-963 |
| RoHS Compliant | Yes |
| Package Quantity | 10000 |
| Power Dissipation | 300mW |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 340MHz |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 300mW |
| Gain Bandwidth Product | 340MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -100mA |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -500mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
