DTA114EMT2L
Производится
Увеличить
Краткое описание:
PNP BJT Transistor, 50V, 50mA, 250MHz, SOT-723
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current of -50mA. Offers a minimum DC current gain (hFE) of 30 and a transition frequency of 250MHz. Packaged in a SOT-723 surface-mount case, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 150mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 30 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-723 |
| Current Rating | -50mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -50V |
| Package Quantity | 8000 |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 150mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Continuous Collector Current | -50mA |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
