DTA115EKAT146
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Краткое описание:
PNP BJT Transistor, 50V, 200mW, 250MHz, SMD
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V Collector Emitter Breakdown Voltage (VCEO) and a maximum collector current of 20mA. Offers a minimum hFE of 82 and a transition frequency of 250MHz. Packaged in an SC-59, 3-pin surface mount (SMD/SMT) configuration, with a maximum power dissipation of 200mW. RoHS compliant and operates within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 82 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SMD/SMT |
| Current Rating | -20mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -50V |
| Package Quantity | 3000 |
| Power Dissipation | 200mW |
| Max Output Current | 100mA |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 20mA |
| Max Power Dissipation | 200mW |
| Operating Supply Voltage | 50V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
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