DTA124EKAT146
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PNP BJT Transistor, 50V V(BR)CEO, 30mA I(C), 250MHz, SC-59, SMD
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V Collector-Emitter Breakdown Voltage (VCEO) and a maximum continuous collector current of 30mA. Offers a low collector-emitter saturation voltage of -300mV and a minimum DC current gain (hFE) of 56. Packaged in an SC-59 surface-mount (SMD/SMT) case with 3 pins, suitable for tape and reel packaging. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 200mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 56 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SMD/SMT |
| Current Rating | -30mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -50V |
| Package Quantity | 3000 |
| Power Dissipation | 200mW |
| Max Output Current | 100mA |
| Number of Channels | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 30mA |
| Max Power Dissipation | 200mW |
| Operating Supply Voltage | 50V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Continuous Collector Current | -30mA |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | -50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -300mV |
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