DTA143EET1G
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PNP BJT Transistor, 50V VCEO, 100mA IC, SOT-416
Дополнительная информация
PNP Bipolar Digital Transistor (BRT) in a SOT-416 package. Features a 50V Collector Emitter Breakdown Voltage and a maximum Collector Emitter Saturation Voltage of 250mV. Offers a continuous collector current of 100mA and a DC rated voltage of -50V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 200mW. This RoHS and Halogen Free component is supplied on a 3000-piece tape and reel.
| RoHS | Compliant |
| Width | 0.9mm |
| Height | 0.9mm |
| Length | 1.65mm |
| hFE Min | 15 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Halogen Free | Halogen Free |
| Package/Case | SOT-416 |
| Current Rating | -100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -50V |
| Package Quantity | 3000 |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 200mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Continuous Collector Current | 100mA |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
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