DTB123TKT146
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PNP BJT Transistor, 40V VCEO, 500mA IC, 200MHz, SMD
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a collector-emitter breakdown voltage of 40V and a maximum collector current of 500mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 200MHz. Designed for surface mount (SMD/SMT) with a maximum power dissipation of 200mW. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 100 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SMD/SMT |
| Current Rating | -500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -40V |
| Package Quantity | 3000 |
| Power Dissipation | 200mW |
| Max Output Current | 500mA |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 200mW |
| Operating Supply Voltage | 50V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | -40V |
| Collector Emitter Breakdown Voltage | 40V |
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