DTC114EM3T5G

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DTC114EM3T5G - Onsemi
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Краткое описание: NPN BJT Transistor, 50V VCEO, 100mA IC, SOT-723
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Digital Transistor (BRT) in a SOT-723-3 package. Features 50V Collector Emitter Breakdown Voltage and 100mA Continuous Collector Current. Offers a low 250mV Collector Emitter Saturation Voltage and 35 minimum hFE. Operates from -55°C to 150°C with 260mW power dissipation. Supplied on an 8000-piece tape and reel. RoHS and Halogen Free compliant.
RoHS Compliant
Width 0.85mm
Height 0.55mm
Length 1.25mm
hFE Min 35
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-723-3
Current Rating 100mA
RoHS Compliant Yes
DC Rated Voltage 50V
Package Quantity 8000
Power Dissipation 260mW
Radiation Hardening No
Reach SVHC Compliant No
Max Breakdown Voltage 50V
Max Collector Current 100mA
Max Power Dissipation 260mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 100mA
Collector-emitter Voltage-Max 250mV
Collector Emitter Voltage (VCEO) 50V
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 250mV

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