DTC123EM3T5G

Производится
DTC123EM3T5G - Onsemi
Увеличить
Краткое описание: NPN BJT 50V 100mA SOT-723 Digital Transistor
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Digital Transistor (BRT) in a compact SOT-723-3 package. Features a 50V collector-emitter breakdown voltage and a low 250mV collector-emitter saturation voltage. Offers a continuous collector current of 100mA, with a maximum power dissipation of 260mW. Operates across a wide temperature range from -55°C to 150°C. This component is RoHS compliant and halogen-free, supplied on an 8000-piece tape and reel.
RoHS Compliant
Width 0.85mm
Height 0.55mm
Length 1.25mm
hFE Min 8
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-723-3
Current Rating 100mA
RoHS Compliant Yes
DC Rated Voltage 50V
Package Quantity 1
Power Dissipation 260mW
Radiation Hardening No
Max Breakdown Voltage 50V
Max Collector Current 100mA
Max Power Dissipation 260mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 100mA
Collector-emitter Voltage-Max 250mV
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 250mV

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.