DTC124EET1G

Производится
DTC124EET1G - Onsemi
Увеличить
Краткое описание: NPN BJT Transistor, 50V, 100mA, SOT-416
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Digital Transistor (BRT) in a compact SOT-416 package. Features a 50V Collector Emitter Breakdown Voltage and a maximum Collector Emitter Voltage (VCEO) of 50V. Offers a continuous collector current of 100mA and a low Collector Emitter Saturation Voltage of 250mV. Operates within a temperature range of -55°C to 150°C and is RoHS compliant and Halogen Free. Supplied on a 3000-piece tape and reel.
RoHS Compliant
Width 0.9mm
Height 0.8mm
Length 1.65mm
hFE Min 60
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-416
Current Rating 100mA
RoHS Compliant Yes
DC Rated Voltage 50V
Package Quantity 3000
Power Dissipation 200mW
Max Output Current 100mA
Radiation Hardening No
Max Breakdown Voltage 50V
Max Collector Current 100mA
Max Power Dissipation 200mW
Operating Supply Voltage 50V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 100mA
Collector-emitter Voltage-Max 250mV
Collector Emitter Voltage (VCEO) 50V
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 250mV

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.