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NPN BJT Transistor, 50V, 100mA, 250MHz, SOT-416
Дополнительная информация
NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage (VCEO) and a maximum continuous collector current of 100mA. Operates with an emitter-base voltage (VEBO) of 5V and offers a minimum DC current gain (hFE) of 100. This surface mount component is packaged in SOT-416 (EMT3) with 3 pins and a transition frequency of 250MHz. Rated for operation between -55°C and 150°C with a maximum power dissipation of 150mW. RoHS compliant and supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 100 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-416 |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 3000 |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 150mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 100mA |
| Collector-emitter Voltage-Max | 150mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
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