DTC144EET1G
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Краткое описание:
NPN Digital Transistor 50V 100mA 200mW SOT-416
Дополнительная информация
NPN Digital BJT transistor featuring a 50V collector-emitter breakdown voltage and a 100mA continuous collector current. This component offers a low 250mV collector-emitter saturation voltage and a minimum hFE of 80. Designed for surface mounting, it is housed in a 3-pin SOT-416 package with dimensions of 1.65mm length, 0.9mm width, and 0.8mm height. Operating across a temperature range of -55°C to 150°C, this RoHS and Halogen Free compliant transistor is supplied on tape and reel.
| RoHS | Compliant |
| Width | 0.9mm |
| Height | 0.8mm |
| Length | 1.65mm |
| hFE Min | 80 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Halogen Free | Halogen Free |
| Package/Case | SC |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 3000 |
| Power Dissipation | 200mW |
| Max Output Current | 100mA |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 200mW |
| Operating Supply Voltage | 50V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 100mA |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
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