DTC144TUAT106
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NPN BJT Transistor, 50V VCEO, 100mA IC, 250MHz, SOT-323
Дополнительная информация
NPN bipolar junction transistor for small signal applications. Features a 50V collector-emitter breakdown voltage and a maximum continuous collector current of 100mA. This silicon transistor operates within a temperature range of -55°C to 150°C and offers a minimum hFE of 100. Packaged in an SC-70 (SOT-323) surface-mount case, it is supplied on tape and reel. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 100 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-323 |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 3000 |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 200mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 100mA |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
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