DTC314TKT146
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NPN BJT Transistor, 15V V(BR)CEO, 600mA I(C), 200MHz, SMT
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 15V Collector-Emitter Breakdown Voltage and 600mA Continuous Collector Current. Operates with a maximum power dissipation of 200mW and a transition frequency of 200MHz. Packaged in a surface-mount SMT3 (SC-59, TO-236-3) 3-pin configuration, supplied on tape and reel. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 100 |
| Polarity | NPN, PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-236-3 |
| Current Rating | 600mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 15V |
| Package Quantity | 1 |
| Power Dissipation | 200mW |
| Max Output Current | 100mA |
| Radiation Hardening | No |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 600mA |
| Max Power Dissipation | 200mW |
| Operating Supply Voltage | 50V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 600mA |
| Collector-emitter Voltage-Max | 80mV |
| Collector Emitter Breakdown Voltage | 15V |
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