DTD113ZKT146
Производится
Увеличить
Краткое описание:
NPN BJT Transistor, 50V, 500mA, 200MHz, SMT
Дополнительная информация
NPN silicon bipolar junction transistor for surface mount applications. Features a 50V collector-emitter breakdown voltage and a maximum continuous collector current of 500mA. This component offers a minimum DC current gain (hFE) of 82 and a transition frequency of 200MHz. Packaged in SMT3 (SC-59) with 3 pins, it operates from -55°C to 150°C and has a power dissipation of 200mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 1.1mm |
| Length | 2.9mm |
| hFE Min | 82 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SMD/SMT |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 3000 |
| Power Dissipation | 200mW |
| Max Output Current | 500mA |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 200mW |
| Operating Supply Voltage | 50V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Continuous Collector Current | 500mA |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
