DTD123EKT146
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Краткое описание:
NPN BJT Transistor, 50V, 500mA, 200MHz, SMT
Дополнительная информация
NPN silicon bipolar junction transistor for small signal applications. Features a 50V collector-emitter breakdown voltage and a 500mA continuous collector current. This surface-mount device offers a minimum hFE of 39 and a transition frequency of 200MHz. Packaged in a 3-pin SMT3 (SC-59) package, it operates from -55°C to 150°C with a maximum power dissipation of 200mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 1.1mm |
| Length | 2.9mm |
| hFE Min | 39 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SMD/SMT |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 3000 |
| Power Dissipation | 200mW |
| Max Output Current | 500mA |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 200mW |
| Operating Supply Voltage | 50V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Continuous Collector Current | 500mA |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
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