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NPN BJT Transistor, 40V, 500mA, 200MHz, SMD
Дополнительная информация
NPN silicon bipolar junction transistor for small signal applications. Features a 40V collector-emitter breakdown voltage (VCEO) and a continuous collector current rating of 500mA. This surface mount device offers a minimum DC current gain (hFE) of 100 and a transition frequency of 200MHz. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 200mW. Packaged in tape and reel, this RoHS compliant component is suitable for SMT assembly.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 100 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SMD/SMT |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 3000 |
| Power Dissipation | 200mW |
| Max Output Current | 500mA |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 200mW |
| Operating Supply Voltage | 40V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 500mA |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
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