DTDG23YPT100
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NPN BJT Transistor, 1A, 60V, 80MHz, TO-243AA, SMT
Дополнительная информация
NPN silicon bipolar junction transistor (BJT) for surface mount applications. Features a maximum continuous collector current of 1A and a collector-emitter breakdown voltage of 60V. Offers a minimum DC current gain (hFE) of 300 and a transition frequency of 80MHz. Housed in a TO-243AA (MPT3) plastic package with 3 pins, this RoHS compliant component operates up to 150°C with a maximum power dissipation of 1.5W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.5mm |
| Height | 1.5mm |
| Length | 4.5mm |
| hFE Min | 300 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-243AA |
| Current Rating | 1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1000 |
| Max Output Current | 1A |
| Radiation Hardening | No |
| Transition Frequency | 80MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 1A |
| Max Power Dissipation | 1.5W |
| Operating Supply Voltage | 60V |
| Max Operating Temperature | 150°C |
| Continuous Collector Current | 1A |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Breakdown Voltage | 60V |
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