DXT2907A-13
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Краткое описание:
PNP BJT Transistor, 60V, 0.6A, 200MHz, SOT-89
Дополнительная информация
PNP Silicon Bipolar Junction Transistor for general-purpose applications. Features a 60V collector-emitter breakdown voltage and 600mA maximum collector current. Operates with a 200MHz gain bandwidth product and a maximum power dissipation of 1W. Packaged in a SOT-89 surface mount plastic case, this component is lead-free, RoHS compliant, and REACH SVHC compliant.
| RoHS | Compliant |
| Type | General Purpose |
| Mount | Surface Mount |
| Width | 2.48mm |
| Height | 1.5mm |
| Length | 4.5mm |
| Weight | 0.001834oz |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-89 |
| Max Frequency | 200MHz |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 600mA |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Collector Base Voltage (VCBO) | -60V |
| Collector-emitter Voltage-Max | 1.6V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -1.6V |
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