DXT5551-13
Производится
Увеличить
Краткое описание:
NPN BJT Transistor, 160V VCEO, 600mA IC, 300MHz, SOT-89
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 160V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 600mA. Operates with a transition frequency of 300MHz and a maximum power dissipation of 1W. Packaged in a SOT-89 surface mount plastic package, this component is RoHS and Lead Free compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.6mm |
| Height | 1.6mm |
| Length | 4.6mm |
| Weight | 0.001834oz |
| Polarity | NPN |
| Frequency | 300MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-89 |
| Max Frequency | 300MHz |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 300MHz |
| Max Breakdown Voltage | 160V |
| Max Collector Current | 600mA |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 180V |
| Collector-emitter Voltage-Max | 200mV |
| Collector Emitter Voltage (VCEO) | 160V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | 200mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
