DXTA92-13
Производится
Увеличить
Краткое описание:
PNP BJT Transistor, 300V VCEO, 500mA IC, 50MHz, SOT-89
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 300V Collector Emitter Breakdown Voltage (VCEO) and a maximum collector current of 500mA. Offers a 50MHz transition frequency and a power dissipation of 1W. Packaged in a surface-mount SOT-89-3L plastic case, this lead-free component operates between -55°C and 150°C.
| RoHS | Compliant |
| Type | General Purpose |
| Mount | Surface Mount |
| Width | 2.48mm |
| Height | 1.5mm |
| Length | 4.5mm |
| Weight | 0.001834oz |
| Polarity | PNP |
| Frequency | 50MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-89 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 50MHz |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Collector Base Voltage (VCBO) | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | -500mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
