DZT2907A-13
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Краткое описание:
PNP BJT Transistor, 60V, 600mA, 200MHz, SOT-223
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 60V Collector-Emitter Breakdown Voltage (VCEO) and 600mA Continuous Collector Current (IC). Operates with a 200MHz transition frequency and offers a minimum hFE of 50. Packaged in a SOT-223 surface-mount plastic package, this component is RoHS and REACH SVHC compliant, operating from -55°C to 150°C.
| RoHS | Compliant |
| Type | General Purpose |
| Mount | Surface Mount |
| Width | 3.5mm |
| Height | 1.6mm |
| Length | 6.5mm |
| Weight | 0.000282oz |
| hFE Min | 50 |
| Polarity | PNP |
| Frequency | 200MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| Max Frequency | 200MHz |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 1.5W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 600mA |
| Max Power Dissipation | 1.5W |
| Gain Bandwidth Product | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -600mA |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 1.6V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -1.6V |
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