DZT3150-13
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Краткое описание:
NPN BJT Transistor, 5A I(C), 25V V(CEO), 150MHz, SOT-223
Дополнительная информация
NPN silicon bipolar junction transistor for surface mount applications. Features a 5A continuous collector current, 25V collector-emitter breakdown voltage, and 150MHz transition frequency. Housed in a SOT-223 plastic package, this single-element transistor offers a minimum hFE of 50 and a maximum power dissipation of 3W. Operating temperature range spans -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| hFE Min | 50 |
| Polarity | NPN |
| Frequency | 150MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 3W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 5A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Continuous Collector Current | 5A |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 500mV |
