DZT5401-13
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PNP BJT Transistor, 150V VCEO, 600mA IC, 300MHz, SOT-223
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) in a SOT-223 plastic package. Features a 150V Collector-Emitter Breakdown Voltage (VCEO) and a 600mA Max Collector Current (IC). Offers a 300MHz Gain Bandwidth Product (GBWP) and a 1W Max Power Dissipation. Operates across a -55°C to +150°C temperature range. Surface mountable, lead-free, and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.5mm |
| Height | 1.6mm |
| Length | 6.5mm |
| Weight | 0.000282oz |
| Polarity | PNP |
| Frequency | 300MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| Max Frequency | 300MHz |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 300MHz |
| Max Breakdown Voltage | 150V |
| Max Collector Current | 600mA |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Collector Base Voltage (VCBO) | 160V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | -500mV |
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