DZT5551-13
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NPN BJT Transistor, 160V VCEO, 600mA IC, 300MHz, SOT-223
Дополнительная информация
NPN bipolar junction transistor featuring a 160V collector-emitter breakdown voltage and 600mA maximum collector current. This silicon transistor operates with a 300MHz transition frequency and a 200mV collector-emitter saturation voltage. Housed in a 4-pin SOT-223 plastic package, it supports surface mounting and offers a wide operating temperature range from -55°C to 150°C. The component is RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | NPN |
| Frequency | 300MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| Max Frequency | 300MHz |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 300MHz |
| Max Breakdown Voltage | 160V |
| Max Collector Current | 600mA |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 180V |
| Collector-emitter Voltage-Max | 200mV |
| Collector Emitter Voltage (VCEO) | 160V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | 200mV |
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