DZTA92-13
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Краткое описание:
PNP BJT Transistor, 300V V(BR)CEO, 500mA I(C), 50MHz, SOT-223
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) in a SOT-223 surface mount plastic package. Features a 300V Collector Emitter Breakdown Voltage (VCEO), 500mA Continuous Collector Current (IC), and 50MHz Gain Bandwidth Product (fT). Offers a minimum hFE of 25 and a maximum power dissipation of 1W. Operates across a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.5mm |
| Height | 1.6mm |
| Length | 6.5mm |
| Weight | 0.000282oz |
| hFE Min | 25 |
| Polarity | PNP |
| Frequency | 50MHz |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 50MHz |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -500mA |
| Collector Base Voltage (VCBO) | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | -500mV |
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