ECH8102-TL-H

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ECH8102-TL-H - Onsemi
Краткое описание: PNP BJT 30V 12A 1.6W 8-Pin ECH SM
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 30V collector-emitter voltage and 12A continuous collector current. Offers a maximum power dissipation of 1600mW and a transition frequency of 140MHz (typ). Housed in an 8-pin ECH package with a 0.65mm pin pitch, measuring 2.9mm x 2.3mm x 0.93mm. Operating temperature range from -55°C to 150°C.
PCB 8
ECCN EAR99
PPAP No
Type PNP
EU RoHS Yes with Exemption
Category Bipolar Power
HTS Code 8541290075
Material Si
Mounting Surface Mount
Cage Code 5V1P1
Pin Count 8
Automotive No
Lead Shape Flat
Schedule B 8541290080
Package/Case ECH
AEC Qualified No
Configuration Single Quad Collector Triple Emitter
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.65
Package Material Plastic
Package Width (mm) 2.3
Package Family Name ECH
Package Height (mm) 0.93(Max)
Package Length (mm) 2.9
Minimum DC Current Gain 200@500mA@2V|150@4A@2V|100@10A@2V
Seated Plane Height (mm) 0.9
Max Operating Temperature 150°C
Maximum Power Dissipation 1600mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 12A
Maximum Emitter Base Voltage 6V
Maximum Transition Frequency 140(Typ)MHz
Maximum Collector Base Voltage 30V
Maximum Collector-Emitter Voltage 30V

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