EE-SJ5-B
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Краткое описание:
Phototransistor Sensor, 30V VCEO, 20mA IC, 4us Fall Time, 850nm
Дополнительная информация
Through-hole mounted phototransistor optical sensor with a 30V collector-emitter breakdown voltage and 50mA forward current. Features a 20mA maximum collector current, 4µs fall and response times, and operates within a -25°C to 85°C temperature range. Emits at an 850nm wavelength with 100mW power dissipation. RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 500um |
| Fall Time | 4us |
| Packaging | Bulk |
| Wavelength | 850nm |
| Response Time | 4us |
| RoHS Compliant | Yes |
| Forward Current | 50mA |
| Package Quantity | 100 |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Reach SVHC Compliant | Unknown |
| Reverse Voltage (DC) | 4V |
| Max Collector Current | 20mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -25°C |
| Reverse Breakdown Voltage | 4V |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
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