EE-SJ8-B
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Краткое описание:
Phototransistor 30V 50mA 100mW Through Hole
Дополнительная информация
The Omron EE-SJ8-B is a phototransistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 20mA. It has a response time and fall time of 4us. The device is designed for through-hole mounting and has a power dissipation of 100mW. The operating temperature range is from -25°C to 85°C. The Omron EE-SJ8-B is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Fall Time | 4us |
| Packaging | Bulk |
| Wavelength | 940nm |
| Response Time | 4us |
| RoHS Compliant | Yes |
| Forward Current | 50mA |
| Package Quantity | 200 |
| Sensing Distance | 8mm |
| Power Dissipation | 100mW |
| Output Configuration | Phototransistor |
| Max Collector Current | 20mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -25°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Breakdown Voltage | 30V |
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