EL816S(D)(TU)-FV
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Краткое описание:
1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, ROHS COMPLIANT, COMPACT, SMD, 4 PIN
Дополнительная информация
Phototransistor optocoupler contains an infrared-emitting diode optically coupled to a silicon phototransistor. The 1-channel device is supplied in a 4-pin DIP package with surface-mount lead-forming options. The D current-transfer-ratio rank supports 300% to 600% CTR at 5 mA forward current and 5 V collector-emitter voltage. It provides 5000 Vrms input-to-output isolation and operates from -55 °C to 110 °C. Electrical ratings include 80 V collector-emitter voltage, 50 mA collector current, and 0.2 V maximum collector-emitter saturation voltage.
| RoHS | Yes |
| REACH | Compliant |
| HTS Code | 8541.40.80.00 |
| Lead Free | Yes |
| Input Type | Infrared emitting diode |
| Output Type | Phototransistor |
| Fall Time Typ | 3µs |
| Military Spec | False |
| Rise Time Typ | 4µs |
| Isolation Voltage | 5000Vrms |
| Number of Channels | 1 |
| Forward Current Max | 50mA |
| Forward Voltage Max | 1.4V |
| Reverse Voltage Max | 6V |
| Storage Temperature | -55 to 125°C |
| Collector Current Max | 50mA |
| Cut-off Frequency Typ | 80kHz |
| Operating Temperature | -55 to 110°C |
| Current Transfer Ratio | 300 to 600% |
| Floating Capacitance Max | 1.0pF |
| Isolation Resistance Min | 5×10^10ohm |
| Total Power Dissipation Max | 200mW |
| Collector-Emitter Voltage Max | 80V |
| Emitter-Collector Voltage Max | 6V |
| Collector-Emitter Saturation Voltage Max | 0.2V |
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